LD datasheet, LD pdf, LD data sheet, datasheet, data sheet, pdf, SGS Thomson Microelectronics, HIGH-VOLTAGE HIGH AND LOW SIDE. The L is an high-voltage device, manufac- tured with the BCD ”OFF-LINE” technology. It has a Driver structure that enables to drive N Channel. Power MOS . LD datasheet, LD circuit, LD data sheet: STMICROELECTRONICS – HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER, alldatasheet, datasheet.
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The internal bootstrap driver gives great advan. R5 controls the gate current and possibly prevents damaging current from flowing back to the driving circuit if there is some source inductance. The L is an high-voltage device, manufac. The diode connected in series to the DMOS has. The updated every day, always provide the best quality and speed. V drop has to be taken into account when the volt. Sign up using Facebook. It has to be: Spehro Pefhany k 4 The bootstrap driver introduces a voltage drop.
It slows the turn-on, and the diode shunts it so the IGBT turns off quickly. At low frequency this drop can be ne. Without that, you could get shoot-through under that condition which would destroy the IGBTs- since they’re in series across the supply voltage. According to me they are used as potential divider, but can any one tell why it is needed over there?
CBOOT selection datasheeet charging: It is more likely that it is there to limit the inrush current to the insulated gate of the IGBT. Arrow Electronics Mouser Electronics.
An internal charge pump fig. The diode around it is to allow for fast discharging of the gate. Post as a guest Name. Allied Electronics DigiKey Electronics. This structure can work only if V OUT is close to. It is realized by a. C BOOT selection has to take into account also the.
A bootstrap circuitry is needed to supply the high. This function is normally accom. Sign up using Email and Password.
(PDF) L6386D Datasheet download
In datasheet it is clear that voltage at pin 13 of LD can be varied from -3 to Vboot Anyway increasing the frequency it. MOS can be seen as an equivalent capacitor.
R9 gate to emitter is just there to keep the IGBT ‘off’ if the driver gets disconnected, removed from the socket, or goes high impedance.
LD Datasheet(PDF) – STMicroelectronics
In the L a patented integrated structure.
HVG steady state consumption is lower than. Sign up or log in Sign up using Google.