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Pulsed Collector Current Q. Soldering Temperature, for 10 sec. V CE on typ. Clamped Inductive Load Test. T JJunction Temperature?

IRG4PC50UD IGBT. Datasheet pdf. Equivalent

Gate – Emitter Charge turn-on. Designed to be a “drop-in” replacement for equivalent. Diode Peak Reverse Recovery Current. Mounting Torque, or M3 Screw.

IRG4PC50UD Datasheet

Diode Reverse Recovery Time. T Pulse width 5.

C unless otherwise specified. Diode Peak Reverse Recovery Current. C unless otherwise specified. Du ty c ycle: Diode Peak Rate of Fall of Recovery. Generation 4 IGBT’s offer highest efficiencies. Measured 5mm from package.


Tu rn -on lo sses inclu de. Optimized for high operating. daatsheet

Gate – Collector Charge turn-on. Clamped Inductive Load Test.

Diode Continuous Forward Current. Q gTotal Gate Charge nC.

Ga te d rive a s spe cified. Data and specifications subject to change without notice. Visit us at www.

Industry standard TOAC package. Total Gate Charge turn-on. IGBT’s optimized for specific application conditions.

IRG4PC50UD 데이터시트(PDF) – International Rectifier

Diode Continuous Forward Current. Optimized for high operating. Visit us at www. Diode Maximum Forward Current. Clamped Inductive Load Current R. Pulsed Collector Current Q.

IRG4PC50UD datasheet, IRG4PC50UD datasheets, manuals for IRG4PC50UD electornic semiconductor part

Data and specifications subject to change without notice. Case-to-Sink, flat, greased surface. Gate – Emitter Charge turn-on. Diode Peak Rate of Fall of Recovery. T JJunction Temperature? Gate – Collector Charge turn-on.